1 UD0006 n-ch 100v fast switching mosfets symbol parameter rating units v ds drain-source voltage 100 v v gs gate-sou u ce voltage f 20 3 v i d @t c =25 continuous drain current, v gs @ 10v 1 14.7 a i d @t c =70 continuous drain current, v gs @ 10v 1 13.6 a i dm pulsed drain current 2 59 a p d @t c =25 total power dissipation 3 50 w p d @t c =70 total power dissipation 3 32 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter 3 typ. max. unit r ja thermal resistance junction-ambient 1 --- 3.6 /w 3 r jc thermal resistance junction-case 1 --- 50 /w 3 id 100v 145m
the UD0006 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UD0006 meet the rohs and green product requirement with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z green device available general description features applications z high frequency point-of-load synchronous buck converter z networking dc-dc power system z power tool application absolute maximum ratings thermal data to252 pin configuration product summery g s d d 15a bv dss r ds(on)
=6a --- 5 --- s 2 UD0006 n-ch 100v fast switching mosfets symbol parameter 3 conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 100 --- --- v r ds(on) static drain-source on-resistance 2 v gs =10v , i d =6a --- 100 145 m : v gs =4.5v , i d =5a --- 150 195 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1.0 1.6 3.0 v ? v gs(th) v gs(th) temperature coefficient --- -4.12 --- mv/ i dss drain-source leakage current v ds =80v , v gs =0v , t j =25 --- --- 1 ua --- --- --- i gss gate-source leakage current v gs e f 20v , v ds =0v --- --- f 100 na gfs forward transconductance v ds =10v , i d r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 2.5 5 : q g total gate charge (10v) v ds =50v , v gs =10v , i d =6a --- 7.8 nc q gs gate-source charge --- 1.3 q gd gate-drain charge --- 2.9 t d(on) turn-on delay time v dd =50v , v gs =10v , r g =6 : i d =1a --- 9.8 ns t r rise time --- 18 t d(off) turn-off delay time --- 8.5 t f fall time --- 10.2 c iss input capacitance v ds =25v , v gs =0v , f=1mhz --- 480 pf c oss output capacitance --- 47 c rss reverse transfer capacitance --- 29 symbol parameter 3 conditions min. typ. max. unit v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- 0.775 1.3 v electrical characteristics (t j =25 , unless otherwise noted) diode characteristics note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3.the power dissipation is limited by 150 junction temperature 4.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. --- --- --- --- --- --- --- --- --- ---
i 3 UD0006 n-ch 100v fast switching mosfets typical characteristics tj( c) i d ,draincurrent(a) v ds ,drain-to-sourcevoltage(v) figure 1. output characteristics v gs ,gate-to-sourcevoltage(v) figure 2. transfer characteristics i d ,draincurrent(a) ds(on) r ds(on) ,on-resistance normalized i d ,draincurrent(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage current and temperature bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 15 12 9 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10v 10 8 6 4 2 0 0 1.2 7.2 6.0 4.8 3.6 2.4 tj=125 c -55 c 25 c 240 200 160 120 80 40 1 369 15 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =6a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 3 v gs =10v 12 1 v gs =5v v gs =6v v gs =7v v gs =8v
4 UD0006 n-ch 100v fast switching mosfets r ds(on) (m ) v gs ,gate-to-sourcevoltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd ,bodydiodeforwardvoltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds ,drain-to-sourcevoltage(v) figure 9. capacitance v gs ,gatetosourcevoltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) i d ,draincurrent(a) v ds ,drain-sourcevoltage(v) 0.1 1 10 100 10 1 0.1 80 v gs =10v single pulse t a =25 c r d s (on) limit 420 350 280 210 140 70 0 24 68 10 0 125 c 75 c 25 c 20.0 10.0 1.0 0 0.25 0.50 0.75 1.00 1.25 5.0 25 c 125 c 75 c c iss c o ss c rss 900 750 600 450 300 150 0 10 15 20 25 30 0 5 i d =6a 10 8 6 4 2 0 01.53.0 4.5 6.0 7.5 9.0 10.5 12.0 v d s = 5 0 v i d = 6 a 11 0 1 0 0 1 1 0 1 0 0 3 0 0 vds=50v,id=1a vgs=10v t d ( o n ) t r t d ( o f f) t f dc 10 m s 1ms 100us
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